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HAT2207C
Silicon N Channel MOS FET Power Switching
REJ03G1239-0600 Rev.6.00 Feb 28, 2006
Features
* Low on-resistance RDS(on) = 100 m typ. (at VGS = 4.5 V) * Low drive current. * High density mounting * 2.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2345 DD DD
1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate
1
2
3
S 1
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board. (FR4 40 40 1.6 mm) Ratings 20 12 1.5 6 1.5 790 150 -55 to +150 Unit V V A A A mW C C
Rev.6.00 Feb 28, 2006 page 1 of 6
HAT2207C
Electrical Characteristics
(Ta = 25C)
Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) | yfs | Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min. 20 12 -- -- 0.4 -- -- 1.5 -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- 100 140 3 135 40 15 1.7 0.4 0.5 7 11 35 7 0.85 Max. -- -- 10 1 1.4 130 210 -- -- -- -- -- -- -- -- -- -- -- 1.1 Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = 10 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = 20 V, VGS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 0.8 A, VGS = 4.5 V Note3 ID = 0.8 A, VGS = 2.5 V Note3 ID = 0.8 A, VGS = 10 V Note3 VGS = 0, f = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V, ID = 1.5 A VGS = 10 V, ID = 0.8 A, VDD = 10 V, RL = 12.5 , Rg = 4.7 IF = 1.5 A, VGS = 0
Rev.6.00 Feb 28, 2006 page 2 of 6
HAT2207C
Main Characteristics
Power vs. Temperature Derating
1.0
Maximum Safe Operation Area
100
Ta = 25C, 1shot pulse
Pch (W)
Drain Current ID (A)
0.8
Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25C
30 When using the FR4 board. 10 3
PW
10 s
10
Channel Dissipation
0.6
0 s
1
1
D
m s 10
=
0.4
0.3 0.1 0.03
C
op
s m
er
at
0.2
Operation in this area is limited by RDS(on)
io
n
0
50
100
150
200
0.01
0.03 0.1 0.3
1
3
10 30 100
Ambient Temperature
Ta (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 Pulse Test 10
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
8
8 25C 6 -25C Tc = 75C 4
10 V
4.5 V 3V 2.5 V
6
4 2V 2 VGS = 1.5 V 0 2 4 6 8 10
2
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source On State Resistance RDS(on) (m)
1000 Pulse Test
Drain to Source Voltage VDS(on) (mV)
160 1.5 A 120
2.5 V 100 VGS = 4.5 V
80
0.8 A ID = 0.5 A
40 Pulse Test 0 2 4 6 8 10
10 0.1
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.6.00 Feb 28, 2006 page 3 of 6
HAT2207C
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
500 100 Pulse Test
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
400
10 Tc = -25C
300 1.5 A 200 VGS = 2.5 V
ID = 0.5, 0.8 A
25C
1
75C
100 VGS = 4.5 V 0 -25 0 25 50
ID = 0.5, 0.8, 1.5 A
VDS = 10 V Pulse Test 0.1 0.1 1 10
75
100 125 150
Case Temperature
Tc
(C)
Drain Current ID (A)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 1.5 A 30 VDS 6
Typical Capacitance vs. Drain to Source Voltage
Gate to Source Voltage VGS (V)
8 1000 300 Ciss 100 Coss 30 Crss 10 3 1 0 VGS = 0 f = 1 MHz 10 20
40
VDD = 5 V 10 V 20 V VGS
20
4
10
VDD = 20 V 10 V 5V 0.4 0.8 1.2 1.6 2
2
0 0
Gate Charge Qg (nc)
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Reverse Drain Current vs. Source to Drain Voltage
10 1000
Switching Characteristics
VGS = 4.5 V, VDS = 10 V Rg = 4.7
Reverse Drain Current IDR (A)
6
5V
2.5 V VGS = 0 V
Switching Time t (ns)
8
tr
100 td(off) tf td(on) 1 0.1
4
10
2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
0.3
1
3
10
Source to Drain Voltage VSD (V)
Drain Current ID (A)
Rev.6.00 Feb 28, 2006 page 4 of 6
HAT2207C
Switching Time Test Circuit Waveform
Vin Monitor D.U.T. RL 4.7 Vin 10 V
Vout Monitor Vin Vout VDD = 10 V 10% 10%
90%
10%
90% td(on) tr
90% td(off) tf
Rev.6.00 Feb 28, 2006 page 5 of 6
HAT2207C
Package Dimensions
Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g
D e A c LP
E
HE
A xM
A SA b
L
Reference Symbol
Dimension in Millimeters
e A2 A
yS
A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas
c
A-A Section
A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1
Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15
Nom
0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2
Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5
1.65
Ordering Information
Part Name HAT2207C-EL-E Quantity 3000 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.6.00 Feb 28, 2006 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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